GaN Semiconductor Device Market Top Players – Wolfspeed, Inc. (US), Qorvo, Inc. (US)

InsightAce Analytic Pvt. Ltd. announces the release of a market assessment report on the "Global GaN Semiconductor Device Market- (By Type (Opto-Semiconductor, RF Semiconductors, Power Semiconductor), By Device (Discrete Semiconductor, Integrated Semiconductor), By Application (Lightning & Lasers, Power Drives (LiDAR, Industrial Drives, E.V. drives), Supplies & Inverters (SMPS, Inverters, Wireless Charging, E.V. charging), Radio Frequency (R.F.), Front-End Module (FEM), Repeater/Booster/DAS, Radar & Satellite)), By Vertical (Consumer & Business Enterprises, Industrial, Automotive, Telecommunications, Aerospace & Defense, Healthcare, Energy & Power), By Voltage Range (Less than 100 V, 100-500 V, More than 500 V)), Trends, Industry Competition Analysis, Revenue and Forecast To 2034."
According to the latest research by InsightAce Analytic, the Global GaN Semiconductor Device Market is valued at USD 22.2 Bn in 2024, and it is expected to reach USD 40.9 Bn by the year 2034, with a CAGR of 6.4% during a forecast period of 2025-2034.
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A Gallium Nitride (GaN) semiconductor device is a next-generation electronic component that utilizes GaN as its foundational semiconductor material, offering significant advantages over traditional silicon-based counterparts. Owing to its exceptional electrical characteristics—including enhanced energy efficiency, higher switching speeds, and superior thermal conductivity—GaN technology has witnessed growing adoption across a broad range of applications.

As the performance capabilities of silicon-based semiconductors approach their technological limits, GaN devices, which can operate up to 100 times faster than silicon, are emerging as a promising solution for advanced electronic systems.